This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications Synchronous Rectifier for DC.
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications Synchronous Rectifier for DC/DC C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS3006SDC |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDMS3008SDC |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDMS3500 |
Fairchild Semiconductor |
MOSFET | |
4 | FDMS3500 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDMS3572 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET | |
6 | FDMS3572 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDMS3600AS |
Fairchild Semiconductor |
MOSFET | |
8 | FDMS3600S |
Fairchild Semiconductor |
MOSFET | |
9 | FDMS3602AS |
Fairchild Semiconductor |
MOSFET | |
10 | FDMS3602S |
Fairchild Semiconductor |
MOSFET | |
11 | FDMS3602S |
ON Semiconductor |
25V Asymmetric Dual N-Channel MOSFET | |
12 | FDMS3604AS |
Fairchild Semiconductor |
MOSFET |