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Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet .
General Description Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100% UIL Tested Application RoHS Compliant DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unl.
FDMS3500 - ON Semiconductor
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3572 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
|
| 2 | FDMS3572 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMS3006SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMS3008SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMS3016DC |
Fairchild Semiconductor |
N-Channel Dual Cool 56 PowerTrench MOSFET |
|
| 6 | FDMS3600AS |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FDMS3600S |
Fairchild Semiconductor |
MOSFET |
|
| 8 | FDMS3602AS |
Fairchild Semiconductor |
MOSFET |
|
| 9 | FDMS3602S |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FDMS3602S |
ON Semiconductor |
25V Asymmetric Dual N-Channel MOSFET |
|
| 11 | FDMS3604AS |
Fairchild Semiconductor |
MOSFET |
|
| 12 | FDMS3604S |
Fairchild Semiconductor |
MOSFET |
|