FDMS3602S - Fairchild Semiconductor

FDMS3602S MOSFET

Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for .

Features

General Description Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy plac.