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FDMS3572 |
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| Part Number | FDMS3572 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal fo... |
| Features |
• Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A • Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A • Typ Qg = 28 nC at VGS = 10 V • Low Miller Charge • Optimized Efficiency at High Frequencies • Pb−Free, Halide Free and RoHS Compliant Applications • DC − DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current: A − Continuous (Package limited) TC = 25°C 22 − Continuous (Silicon limited) TC = 25°C 48 − Continuous TA = 25°C (Note 1a) 8.8 − Pulsed 50 PD TJ, TS... |
| Document |
 FDMS3572 Data Sheet
PDF 292.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3572 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
|
| 2 | FDMS3500 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDMS3500 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMS3006SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMS3008SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
|