FDMS3008SDC - Fairchild Semiconductor

FDMS3008SDC N-Channel MOSFET

„ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in b.

Features

General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has .