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FDMC610P |
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| Part Number | FDMC610P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM co... |
| Features |
• Max rDS(on) = 3.9 mW at VGS = −4.5 V, ID = −22 A • Max rDS(on) = 6.4 mW at VGS = −2.5 V, ID = −16 A • State−of−the−art Switching Performance • Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency • Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • High Side Switching for High End Computing • High Power Density DC−DC Synchronous Buck Converter MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Dra... |
| Document |
 FDMC610P Data Sheet
PDF 369.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC610P |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC612PZ |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDMC6296 |
Fairchild Semiconductor |
Single N-Channel Logic-Level Power Trench MOSFET |
|
| 4 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET |
|