FDD6688S - Fairchild Semiconductor

FDD6688S 30V N-Channel MOSFET

The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Applications • DC/DC converter .

Features

• 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V
• Low gate charge (31 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 88 100 69 3.1 1.3
  –55 to +150 Ther.