FDD6680S - Fairchild Semiconductor

FDD6680S 30V N-Channel PowerTrench SyncFET

The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680S as the.

Features

• 55 A, 30 V RDS(ON) = 11 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability . Applications
• DC/DC converter
• Motor Drives D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W 55 100 60 .