FDD6688S |
Part Number | FDD6688S |
Manufacturer | Fairchild Semiconductor |
Description | The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low ... |
Features |
• 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V • Low gate charge (31 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 88 100 69 3.1 1.3 –55 to +150 Ther... |
Document |
FDD6688S Data Sheet
PDF 177.88KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDD6688 |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
2 | FDD6680 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
3 | FDD6680A |
Fairchild Semiconductor |
N-Channel/ Logic Level/ PowerTrench MOSFET | |
4 | FDD6680S |
Fairchild Semiconductor |
30V N-Channel PowerTrench SyncFET | |
5 | FDD6685 |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET |