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This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317 Features • Fast switching • rDS(ON) = 0.058.
low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317
Features
• Fast switching
• rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
• rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
• Qg(TOT) (Typ) = 2.6nC, VGS = 5V
• Qgd (Typ) = 0.8nC
• CISS (Typ) = 255pF
Applications
• DC/DC converters
D
D G S
G
D-PAK TO-252 (TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to S.
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|---|---|---|---|---|
| 1 | FDD6630A |
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| 2 | FDD6630A |
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| 3 | FDD6635 |
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| 4 | FDD6637 |
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| 5 | FDD6637_F085 |
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| 6 | FDD6606 |
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| 7 | FDD6606 |
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| 8 | FDD6612A |
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| 9 | FDD6644 |
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| 10 | FDD6670A |
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| 11 | FDD6670AL |
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| 12 | FDD6670S |
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