FDD6680A - Fairchild Semiconductor

FDD6680A N-Channel/ Logic Level/ PowerTrench MOSFET

This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • 56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V. Low gate charge ( 23.

Features

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• 56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V. Low gate charge ( 23nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications
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• DC/DC converter Motor drives
• D D G S TO-252 S TA=25oC unless otherwise noted G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Parameter Ratings 30 ±20 (Note 1) (Note 1a) Units V V A Maximum Drain Current - Continuous Maximum Drain Current - Pulsed 56 14 100 60 2.8 1.3 -55 to +150 PD Maximum Power Dissipation @ T C = 25oC T A .