FDD6680 - Fairchild Semiconductor

FDD6680 30V N-Channel PowerTrench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching Speed • .

Features

• 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely low RDS(ON) Applications
• DC/DC converter
• Motor Drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Units V V A Continuous Drain Current @TC=25°C @TA=25°C Pulsed 46 12 100 56 3.3 1.5
  –55 to +175 PD Power Di.