FDC653N - ON Semiconductor

FDC653N N-Channel MOSFET

This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered.

Features

• 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V
• Proprietary SUPERSOTTM−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.
• High Density Cell Design for Extremely Low RDS(ON).
• Exceptional On−Resistance and Maximum DC Current Capability.
• This Device is Pb−Free and Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage − Continuous ±20 V ID Drain Current − Continuous (Note 1a) 5 A − Pulsed 15 PD Maxim.