FDC655AN - Fairchild Semiconductor

FDC655AN Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are require.

Features

6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .55 pin 1 A G D D 2 5 3 4 SuperSOT TM -6 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note .