FDC658AP - Fairchild Semiconductor

FDC658AP MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Applications „ Battery management „ Load switch „ Battery protection „ DC/DC conversion Features „ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A „ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A „ Low Ga.

Features

„ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A „ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A „ Low Gate Charge „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Parameter Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) Thermal Characteristics RTJA RTJC The.