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These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power.
-3.6 A, -30 V. RDS(ON) = 0.075 Ω @ VGS = -10 V RDS(ON) = 0.125 Ω @ VGS = -4.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 4 .65 G pin 1 2 5 D D SuperSOT TM -6 3 4 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed.
FDC654P - ON Semiconductor
This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process. It has been optimized for bat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDC6506P |
Fairchild Semiconductor |
Dual P-Channel Logic Level PowerTrench MOSFET |
|
| 2 | FDC6506P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDC653N |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDC653N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDC655AN |
Fairchild Semiconductor |
Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET |
|
| 6 | FDC655BN |
Fairchild Semiconductor |
PowerTrench MOSFET |
|
| 7 | FDC655BN |
ON Semiconductor |
Single N-Channel MOSFET |
|
| 8 | FDC6561AN |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 9 | FDC6561AN |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 10 | FDC658AP |
Fairchild Semiconductor |
MOSFET |
|
| 11 | FDC658AP |
ON Semiconductor |
P-Channel MOSFET |
|
| 12 | FDC658AP-G |
ON Semiconductor |
P-Channel MOSFET |
|