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FDC653N |
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| Part Number | FDC653N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−stat... |
| Features |
• 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V • Proprietary SUPERSOTTM−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities. • High Density Cell Design for Extremely Low RDS(ON). • Exceptional On−Resistance and Maximum DC Current Capability. • This Device is Pb−Free and Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage − Continuous ±20 V ID Drain Current − Continuous (Note 1a) 5 A − Pulsed 15 PD Maxim... |
| Document |
 FDC653N Data Sheet
PDF 311.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC653N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDC6506P |
Fairchild Semiconductor |
Dual P-Channel Logic Level PowerTrench MOSFET |
|
| 3 | FDC6506P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 4 | FDC654P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC654P |
ON Semiconductor |
P-Channel MOSFET |
|