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FDC653N |
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| Part Number | FDC653N |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-... |
| Features |
5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
3 .65
G
pin 1
2
5
D D
SuperSOT
TM
3
-6
4
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation
... |
| Document |
 FDC653N Data Sheet
PDF 70.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC653N |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDC6506P |
Fairchild Semiconductor |
Dual P-Channel Logic Level PowerTrench MOSFET |
|
| 3 | FDC6506P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 4 | FDC654P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC654P |
ON Semiconductor |
P-Channel MOSFET |
|