FDC6401N - Fairchild Semiconductor

FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate cha.

Features

• 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Low gate charge (3.3 nC)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability Applications
• DC/DC converter
• Battery Protection
• Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25 C unless otherwise noted o 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Parameter Ratings 20 ±12 (Note 1a) Units V V A W 3.0 12 0.96 0.9 0.7
  –55 to +150 Power Dissipation fo.