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FDC6401N |
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| Part Number | FDC6401N |
| Manufacturer | Fairchild Semiconductor |
| Description | This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimize... |
| Features |
• 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Battery Protection • Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25 C unless otherwise noted o 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ±12 (Note 1a) Units V V A W 3.0 12 0.96 0.9 0.7 –55 to +150 Power Dissipation fo... |
| Document |
 FDC6401N Data Sheet
PDF 76.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6401N |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | FDC640P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC640P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET |
|
| 5 | FDC6420C |
Fairchild Semiconductor |
20V N & P-Channel PowerTrench MOSFETs |
|