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FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package:small .
Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). RoHS Compliant Qualified to AEC Q101 Applications Load switch Battery protection Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www.fairchildsemi.com FDC642P_F085 P-Channel PowerT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDC642P-F085 |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDC642P-F085P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC642P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC642P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET |
|
| 6 | FDC6420C |
Fairchild Semiconductor |
20V N & P-Channel PowerTrench MOSFETs |
|
| 7 | FDC6401N |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 8 | FDC6401N |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 9 | FDC640P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 10 | FDC640P |
ON Semiconductor |
P-Channel MOSFET |
|
| 11 | FDC6432SH |
Fairchild Semiconductor |
12V P-Channel PowerTrench MOSFET |
|
| 12 | FDC645N |
Fairchild Semiconductor |
N-Channel MOSFET |
|