FDC642P-F085P - ON Semiconductor

FDC642P-F085P P-Channel MOSFET

MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% .

Features

 Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A
 Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A
 Fast Switching Speed
 Low Gate Charge (6.9 nC Typical)
 High Performance Trench Technology for Extremely Low RDS(on)
 SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)
 AEC−Q101 Qualified and PPAP Capable
 This Device is Pb−Free and is RoHS Compliant Applications
 Load Switch
 Battery Protection
 Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Vol.