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FDC6401N |
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| Part Number | FDC6401N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimize... |
| Features |
• 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V • Low Gate Charge (3.3 nC) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • This is a Pb−Free and Halide Free Device Applications • DC/DC Converter • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current −Continuous (Note 1a.) −Pulsed 20 V ±12 V A 3.0 12 PD Power Dissipation for Single Operation (Note ... |
| Document |
 FDC6401N Data Sheet
PDF 327.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6401N |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDC640P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC640P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET |
|
| 5 | FDC6420C |
Fairchild Semiconductor |
20V N & P-Channel PowerTrench MOSFETs |
|