This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ .
• 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability
S D D
SuperSOT TM-6
G D D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Res.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDC6401N |
ON Semiconductor |
Dual N-Channel MOSFET | |
2 | FDC6401N |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
3 | FDC640P |
Fairchild Semiconductor |
P-Channel MOSFET | |
4 | FDC640P |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET | |
6 | FDC6420C |
Fairchild Semiconductor |
20V N & P-Channel PowerTrench MOSFETs | |
7 | FDC642P |
Fairchild Semiconductor |
P-Channel MOSFET | |
8 | FDC642P |
ON Semiconductor |
P-Channel MOSFET | |
9 | FDC642P-F085 |
ON Semiconductor |
P-Channel MOSFET | |
10 | FDC642P-F085P |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDC642P_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
12 | FDC6432SH |
Fairchild Semiconductor |
12V P-Channel PowerTrench MOSFET |