FDB86102LZ - Fairchild Semiconductor

FDB86102LZ MOSFET

„ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® .

Features

General Description „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ DC-DC conversion „ Inverter „ Synchronous Rectifier.