FDB86360_F085 - Fairchild Semiconductor

FDB86360_F085 MOSFET

FDB86360_F085 N-Channel Power Trench® MOSFET FDB86360_F085 N-Channel Power Trench® MOSFET 80V, 110A, 1.8mΩ January 2014 DD Features „ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid a.

Features

„ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuo.