FDB86563_F085 - Fairchild Semiconductor

FDB86563_F085 MOSFET

FDB86563_F085 N-Channel PowerTrench® MOSFET FDB86563_F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.8 mΩ December 2014 Features „ Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „.

Features

„ Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems DD GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild web‐ site  at  https://www.fairchildsemi.com/package‐drawings/TO/ TO263A02.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Vol.