FDB8160_F085 - Fairchild Semiconductor

FDB8160_F085 N-Channel MOSFET

FDB8160_F085 N-Channel PowerTrench® MOSFET FDB8160_F085 N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ October 2010 Features „ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 187nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ 12V.

Features

„ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 187nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ 12V Automotive Load Control „ Starter/Alternator Systems „ Electronic Power Steering Systems „ DC/DC converter TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev. C 1 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source.