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FDB86102LZ |
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| Part Number | FDB86102LZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench ... |
| Features |
General Description
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench
technologies Fast switching speed 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier... |
| Document |
 FDB86102LZ Data Sheet
PDF 209.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB86135 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDB86360_F085 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDB86363_F085 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDB86366-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | FDB86366_F085 |
Fairchild Semiconductor |
MOSFET |
|