FDB86563-F085 - ON Semiconductor

FDB86563-F085 N-Channel Power MOSFET

FDB86563-F085 N-Channel PowerTrench® MOSFET FDB86563-F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.8 mΩ Features „ Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and M.

Features

„ Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D D G GS TO-263 S FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Powe.