EPC2015C - EPC

EPC2015C Power Transistor

eGaN® FET DATASHEET EPC2015C – Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 4 mΩ ID , 53 A D G S EPC2015C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and z.

Features

.8 RθJB Thermal Resistance, Junction to Board 1.7 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1) 54 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2015C eGaN® FETs are supplied only in passivated die form with solder bars Die size: 4.1 mm x 1.6 mm Applications
• High Frequency DC-DC Conversion
• Point-of-Load Converters
• Industrial Automation
• Synchronous Rectification
• Class-D Audio .