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EPC2015C |
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| Part Number | EPC2015C |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2015C – Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 4 mΩ ID , 53 A D G S EPC2015C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mo... |
| Features |
.8
RθJB Thermal Resistance, Junction to Board
1.7
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1)
54
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2015C eGaN® FETs are supplied only in passivated die form with solder bars Die size: 4.1 mm x 1.6 mm
Applications • High Frequency DC-DC Conversion • Point-of-Load Converters • Industrial Automation • Synchronous Rectification • Class-D Audio ... |
| Document |
 EPC2015C Data Sheet
PDF 1.56MB |
| Distributor | Stock | Price | Buy |
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