EPC2016C - EPC

EPC2016C Power Transistor

eGaN® FET DATASHEET EPC2016C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A D G S EPC2016C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and.

Features

-to-Case 2 RθJB Thermal Resistance, Junction-to-Board 4 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 69 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS Drain-to-Source Voltage Drain-Source Leakage VGS = 0 V, ID = 300 μA VGS = 0 V, VDS = 80 V Gate-to-Source Forward Leakage IGSS Gate-to-Sou.