eGaN® FET DATASHEET EPC2019 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 42 mΩ max ID , 8.5 A D G S EPC2019 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG .
tage VGS Gate-to-Source Voltage 6 V -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 2.7 RθJB Thermal Resistance, Junction-to-Board 7.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 72 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. PARAMETER Static Characteristics (T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EPC2010 |
EPC |
Power Transistor | |
2 | EPC2010C |
EPC |
Power Transistor | |
3 | EPC2012 |
EPC |
Power Transistor | |
4 | EPC2012C |
EPC |
Power Transistor | |
5 | EPC2014 |
EPC |
Power Transistor | |
6 | EPC2015 |
EPC |
Power Transistor | |
7 | EPC2015C |
EPC |
Power Transistor | |
8 | EPC2016 |
EPC |
Power Transistor | |
9 | EPC2016C |
EPC |
Power Transistor | |
10 | EPC20 |
ACME |
EPC Cores | |
11 | EPC2001 |
EPC |
Power Transistor | |
12 | EPC2001C |
EPC |
Power Transistor |