Table 3. Pin Details of EM639165 Symbol CLK CKE BA0,BA1 Type Input Input Input Description Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If.
• Fast access time from clock: 5/5.4 ns
• Fast clock rate: 166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• 2M word x 16-bit x 4-bank
• Programmable Mode registers
- CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• CKE power down mode
• Single +3.3V ± 0.3V power supply
• Interface: LVTTL
• 54-pin 400 mil plastic TSOP II package - Pb free and Halogen free
Overview
The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EM639165 |
Etron Technology Inc. |
8Mega x 16bits SDRAM | |
2 | EM639325 |
Etron Technology |
4M x 32 bit Synchronous DRAM | |
3 | EM6352 |
EM Microelectronic - MARIN SA |
Voltage Detecto | |
4 | EM6353 |
EM Microelectronic - MARIN SA |
Reset Circuit | |
5 | EM6354 |
EM Microelectronic - MARIN SA |
Reset Circuit | |
6 | EM636165 |
Etron |
1M x 16 Synchronous DRAM | |
7 | EM636165-XXI |
Etron Technology |
1Mega x 16 Synchronous DRAM | |
8 | EM636327 |
Etron Technology Inc. |
512K x 32 High Speed Synchronous Graphics DRAM(SGRAM) | |
9 | EM637327 |
Etron Technology Inc. |
1Mega x 32 SGRAM | |
10 | EM638165 |
Etron Technology |
4M x 16 bit Synchronous DRAM | |
11 | EM638165TS |
Etron Technology |
4M x 16 bit Synchronous DRAM | |
12 | EM638325 |
Etron Technology |
2M x 32 Synchronous DRAM |