EM638165 - Etron Technology

EM638165 4M x 16 bit Synchronous DRAM

EtronTech EM638165 4M x 16 bit Synchronous DRAM (SDRAM) Preliminary (Rev. 5.3, Dec. /2013) Features Overview • Fast access time from clock: 4.5/5.4/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2,.

Features

Overview
• Fast access time from clock: 4.5/5.4/5.4 ns
• Fast clock rate: 200/166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• 1M word x 16-bit x 4-bank
• Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function - Optional drive strength control
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• CKE power down mode
• Single +3.3V ± 0.3V power supply
• Operating Temperature: TA = 0~70°C
• Interface: LVTTL
• 54-pin 400 mil plastic TSOP II package - Pb and Halog.