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www.DataSheet4U.com EIC1314-8 ISSUED 2/06/2009 13.75-14.5 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • 13.75– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package EIC1314-8 ELECTRICAL CHARACTERISTI.
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• 13.75
– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package
EIC1314-8
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE IMD3 Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain Flatness f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Power Added Efficiency at 1dB Compression f = 13.75-14.5GH.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EIC1314-12 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 2 | EIC1314-2 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 3 | EIC1314-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 4 | EIC1314-7 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 5 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET |
|
| 6 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 7 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 8 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 9 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 10 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 11 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 12 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|