www.DataSheet4U.com EIC1010-25 10.0-10.25 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 10.0 – 10.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and R.
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• 10.0
– 10.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC1010-25
0.024 0.580
YYWW
SN
0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095
0.055 0.168
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH
1.
Caution! ESD sensitive device. MIN
43 6.5
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1011-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1112-5 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC1112-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1212-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1212-8 |
Excelics Semiconductor |
Internally Matched Power FET |