www.DataSheet4U.com EIC1314-4 UPDATED 08/21/2007 13.75-14.50GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 13.75 –14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -45 dBc IM3 at Po = 25.0 dBm SCL 100% Tested for DC, RF, and.
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• 13.75
–14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -45 dBc IM3 at Po = 25.0 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1314-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC1314-2 |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIC1314-7 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC1314-8 |
Excelics Semiconductor |
12.75-13.25 GHz 12-Watt Internally Matched Power FET | |
5 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
6 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET |