www.DataSheet4U.com EIC1010-4 ISSUED 10/29/2008 10.0-10.70GHz 4-Watt Internally-Matched Power FET Excelics EIC1010-4 FEATURES • • • • • • • 10.0–10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested .
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• 10.0
–10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
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SN
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL Freq P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Caution! ESD sensitive device. MIN 10 35.5 6.5 36.5 7.5 ±0.6 30 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0
o
TYP
MAX 10.7
UNITS Ghz dBm dB dB %
Frequency Output Power at 1dB Compression VDS = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
2 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1011-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1112-5 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC1112-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1212-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1212-8 |
Excelics Semiconductor |
Internally Matched Power FET |