www.DataSheet4U.com EIC1010A-20 ISSUED 07/03/2007 10.00-10.25 GHz 20-Watt Internally Matched Power FET Excelics EIC1010A-20 .945 .803 .079 MIN .079 MIN FEATURES • • • • • • • 10.00– 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic.
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– 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
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YYWW
SN
.315 .685 .617 .004 .168 .055
ALL DIMENSIONS IN INCHES
.095
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain Flatness f = 10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
4 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1011-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1112-5 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC1112-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1212-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1212-8 |
Excelics Semiconductor |
Internally Matched Power FET |