EIC1011-4 - Excelics Semiconductor

EIC1011-4 Internally Matched Power FET

www.DataSheet4U.com EIC1011-4 UPDATED 08/21/2007 10.70-11.70GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 10.70 –11.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and.

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• 10.70
  –11.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Comp.