EIC0910-8 - Excelics Semiconductor

EIC0910-8 Internally Matched Power FET

www.DataSheet4U.com EIC0910-8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RT.

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• 9.50
  –10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compressi.