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www.DataSheet4U.com EIC0910-2 UPDATED 08/21/2007 9.50-10.50GHz 2-Watt Internally-Matched Power FET FEATURES • • • • • • • 9.50 –10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and R.
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• 9.50
–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EIC0910-12 |
Excelics Semiconductor |
9.50-10.50 GHz 12-Watt Internally Matched Power FET |
|
| 2 | EIC0910-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET |
|
| 3 | EIC0910-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 4 | EIC0910-5 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 5 | EIC0910-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 6 | EIC0910A-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 7 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET |
|
| 8 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 9 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 10 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 11 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 12 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|