EIC0910-12 - Excelics Semiconductor

EIC0910-12 9.50-10.50 GHz 12-Watt Internally Matched Power FET

www.DataSheet4U.com EIC0910-12 UPDATED 03/07/2008 9.50-10.50 GHz 12-Watt Internally Matched Power FET Excelics EIC0910-12 .827±.010 .669 .120 MIN .120 MIN FEATURES • • • • • • • 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc.

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• 9.50
  –10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200Ma Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDS.