DTS2212 - Din-Tek

DTS2212 Dual N-Channel MOSFET

Dual N-Channel 20 V (D-S) MOSFET DTS2212 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.150 at VGS = 4.5 V 0.170 at VGS = 2.5 V 0.210 at VGS = 1.8 V ID (A)a 1.8a 1.5a 1.3a Qg (Typ.) 0.9 nC SOT-323-6 S1 1 6 D1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Typical ESD Protection .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Typical ESD Protection 2100 V HBM
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch for Portable Applications D1 D2 G1 2 5 G2 G1 G2 D2 3 4 S2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 .