DTS2050 - Din-Tek

DTS2050 N-Channel MOSFET

N-Channel 20 V (D-S) MOSFET DTS2050 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V ID (A)a, g 0.63 0.5 Qg (Typ.) 0.75nC FEATURES • TrenchFET® Power MOSFET: 1.2 V Rated • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V SOT-723 G1 S2 3D APPLICATIONS • Load/Power Switching for Portable Devices • D.

Features

• TrenchFET® Power MOSFET: 1.2 V Rated
• 100 % Rg Tested
• Gate-Source ESD Protected: 1000 V SOT-723 G1 S2 3D APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
• Battery Operated Systems
• Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TA = 25 °C IS Maxi.