DTS2011 - Din-Tek

DTS2011 P-Channel MOSFET

P-Channel 20 V (D-S) MOSFET DTS2011 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.085 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A)c - 3.1 - 2.3 Qg (Typ.) 4.3 nC SOT-323 S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Loa.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch
• DC/DC Converters G1 3D S2 Top View G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C IS Maximum Power Dissipation TC = 70 °C TA = 2.