DTS2211 - Din-Tek

DTS2211 Dual P-Channel MOSFET

Dual P-Channel 20 V (D-S) MOSFET DTS2211 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.183 at VGS = - 4.5 V - 20 0.262 at VGS = - 2.5 V 0.383 at VGS = - 1.8 V ID (A) - 1.3a - 1.2 - 1.0 Qg (Typ.) 1.6 nC SOT-323-6 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Opti.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch for Portable Devices S1 S2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage .