DTS2301B - Din-Tek

DTS2301B P-Channel MOSFET

P-Channel 0-V (D-S) MOSFET DTS2301B www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configuration - 20 0.071 0.095 - 3.8 Single FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Devices TO-236 (SOT-23) G 1 S2 3D Top View  S G D P-Chann.

Features

• Halogen-free Option Available
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch for Portable Devices TO-236 (SOT-23) G 1 S2 3D Top View  S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and .